magnet [6], (2) passage of multiple ion types and charge states through magnetic mass separation systems following various charge exchange and molecular breakup events [7], (3) vapor transport of contaminant elements to the target surface followed by recoil implantation by the ion beam [8], energy

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ion species are ionized and accelerated to hundreds or thousands of volts of energy by mass separation magnet and impacted into as perfect silicon surface. This will result thousand of silicon atoms being displaced from each ion implant. The implantation energies are between 1.0keV and 1.0MeV. It would

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3.1 Ion implantation ... Subsequently, the ions are separated by mass, using an analyzing magnet. After passing through electrostatic or magnetic quadrupole for focusing, the ions becomeimplanted in the near-surface region of the desired material.In ... After mass separation, the ions pass through an

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Ion Implanter e.g. AsH 3 As +, AsH +, H+, AsH 2 Magnetic Mass separation Ion source Translational wafer holder motion. As+ Accelerator Column Accelerator Voltage: 1-200kV Dose ~ 1011-1016/cm2 Accuracy of dose: 0.5% Uniformity 1% for 8” wafer $3-4M/implanter ion beam (stationary) wafer spinning wafer holder ~60 wafers/hour

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Ion Implanter e.g. AsH3 As+, AsH+, H+, AsH 2 + Magnetic Mass separation Ion source Translational wafer holder motion. As+ Accelerator Column Accelerator Voltage: 1-200kV Dose ~ 1011-1016/cm2 Accuracy of dose: 0.5% Uniformity 1% for 8 ˛ wafer $3-4M/implanter ion beam (stationary) wafer spinning wafer holder ~60 wafers/hour

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Ion source Translational wafer holder motion. Ion Implanter Magnetic Mass separation Lecture 7 $3-4M/impIanter -60 wafers/hour AsH2+ Accelerator Voltage: 1-200kV Dose 1011-101B/cm2 Accuracy of dose: 0.5% Uniformity l% for 8 wafer Accelerator Column eon beam (stationary) spinning wafer holder wafer Mask layer thickness can block ion penetration

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Doping: Ion Implantation 85 Figure 2. Schematic view of the mass analyzer of an ion implanter. F = q v B (1) where F is the magnetic force, q the charge on the ion, v is the velocity vector, and B the magnetic field vector. Thus, F is represented by a scalar of the cross product between v and B

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A new 2.45 GHz microwave ion source has been developed for high‐current ion implantation. The source uses permanent magnets to generate the ECR magnetic field

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2. Basics of ion implantation technology Historically speaking, an ion implantation process patent was submitted by W. Shockley in 1949[6], who is the one of the inventors of transistors. It was applied to mass-production line in early 1970s. Therefore, it can be ’ At first, ion

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A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of

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The ion implanter 100 has much higher throughput without introducing energy contamination or nonuniformity of beam current density and implant angles because the corrector magnet, which is the component within a conventional beamline ion implanter that collimates and filters the ion beam, has been separated into a separate collimator magnet and

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This paper shows that charge exchange events and dissociation reactions of ions may impact the purity of the ion beam in ion implantation, leading to contamination of the implanted target. Physical relations are derived that explain why unwanted ions are transported in the ion beam despite of a magnetic mass separation

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The main point of design is production, acceleration and transportation of high nitrogen ion beam current up to 5mA and ion energy up to 300keV. 300keV ion implanter consists of Duo-PIGatron ion source, einzel lens, mass separation magnet, acceleration tube, magnetic quadrupole doublet, electrostatic scanner and target

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300keV ion implanter consists of Duo-PIGatron ion source, einzel lens, mass separation magnet, acceleration tube, magnetic quadrupole doublet, electrostatic scanner and target. Beam optics design carried out where space charge effect in the acceleration tube and second order aberrations in the mass separation magnet were considered. The mass

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The magnetic mass separation is characterized in Section 3. 4. After the magnet focus, the beam undergoes additional focusing in an Einzel lens and deflection. Quantitative ion detection is realized by current measurement with a Faraday cup, where also the MMC implantation takes place. This is described in Section 4

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Nov 01, 1986 The Precision Implant 9000 Ion Implanter uses a mass analysis geometry where the ribbon beam extracted from a Freeman type ion source has the long axis of the ion source extraction slot in the dispersion plane of the magnetic analysis system. This allows the ion source and its associated extraction system to be placed close to the analysis

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One of the components of the ion implanter is an analyzer magnet that bends the ion beam through a right an-gle to select the desired impurity ions from the output of the source. A charged particle moving with velocity v through a magnet field B will experience a force, given by F q vB= ( ) (1)

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An ion source that extracts a slit-shaped beam suitable for ion implantation can provide mass-separated currents of 10 mA (maximum 15 mA) for As+ and P+

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